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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 33V |
| 电压 - 击穿（分钟）: | 36.7V |
| 电压 - 钳位（最大值）@ ipp: | 53.3V |
| 电流 - 峰值脉冲 (10/1000µs): | 11.3A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SA40AHA0GTSC (Taiwan Semiconductor) |
TVS DIODE 40V 64.5V DO204AC |
|
SMCG30CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 30V 48.4V DO215AB |
|
5KP43A-GComchip Technology |
TVS DIODE 43V 69.4V R-6 |
|
SMAJ16A R3GTSC (Taiwan Semiconductor) |
TVS DIODE 16V 26V DO214AC |
|
UPT10R/TR7Roving Networks / Microchip Technology |
TVS DIODE 10V 18V POWERMITE 1 |
|
MXLSMCJLCE13AE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO214AB |
|
SM15T33CA-M3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 28.2V 45.7V DO214AB |
|
SMCJ180CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 180V DO214AB |
|
1KSMB75CA M4GTSC (Taiwan Semiconductor) |
TVS DIODE 64.1V 103V DO214AA |
|
SMCJ16ATSC (Taiwan Semiconductor) |
TVS DIODE 16V 26V SMC |
|
3KASMC22AHM3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 22V 35.5V DO214AB |
|
P4SMA15CA-QJ.W. Miller / Bourns |
TVS DIODE |
|
SMB10J14CAHR5GTSC (Taiwan Semiconductor) |
TVS DIODE 14V 23.2V DO214AA |
