English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 110V |
| 电压 - 击穿（分钟）: | 122V |
| 电压 - 钳位（最大值）@ ipp: | 177V |
| 电流 - 峰值脉冲 (10/1000µs): | 16.8A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXSMBG120AE3Roving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AA |
|
SMLJ78E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 78V 139V DO214AB |
|
SMAJ120A R3GTSC (Taiwan Semiconductor) |
TVS DIODE 120V 193V DO214AC |
|
SA10AHE3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 10V 17V DO204AC |
|
5KP10A-E3/51Vishay General Semiconductor – Diodes Division |
TVS DIODE 10V 17V P600 |
|
TGL34-150ADiotec Semiconductor |
TVS DO-213AA 128V 150W UNI |
|
MMBZ10VAL,215Nexperia |
TVS DIODE 6.5V 14.2V SOT23 |
|
MPLAD6.5KP17CARoving Networks / Microchip Technology |
TVS DIODE 17V 27.6V PLAD |
|
MXLSMLJ30CAE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V DO214AB |
|
MXLSMBJ150ARoving Networks / Microchip Technology |
TVS DIODE 150V 243V DO214AA |
|
MXSMBJSAC5.0E3Roving Networks / Microchip Technology |
TVS DIODE 5V 10V DO214AA |
|
SMB10J33AHE3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 33V 53.3V DO214AA |
|
MPLAD30KP170CAE3Roving Networks / Microchip Technology |
TVS DIODE 170V 275V PLAD |
