类型 | 描述 |
---|---|
系列: | LCE |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 48V |
电压 - 击穿(分钟): | 53.3V |
电压 - 钳位(最大值)@ ipp: | 77.4V |
电流 - 峰值脉冲 (10/1000µs): | 19.4A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | DO-201 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MXSMBG15CARoving Networks / Microchip Technology |
TVS DIODE 15V 24.4V DO215AA |
|
BZW04-40-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 40.2V 64.8V DO204AL |
|
3.0SMCJ12ADiotec Semiconductor |
TVS SMC 12V 3000W UNI |
|
1N6291A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 58.1V 92V 1.5KE |
|
SMAJE90APowerStor (Eaton) |
TVS DIODE 90V 146VC 400W SMA |
|
MSMBJ160CAE3Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO214AA |
|
SMA6J8.5A-E3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 8.5V 18.7V DO214AC |
|
SMBJ6.5D-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 6.5V 11V DO214AA |
|
SMCG12AHE3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 12V 19.9V DO215AB |
|
SMB8J30CA-E3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 30V 48.4V DO214AA |
|
VCUT05E1-SD0-G4-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 5.5V 11V CLP0603 |
|
MASMCJLCE45AE3Roving Networks / Microchip Technology |
TVS DIODE 45V 72.7V DO214AB |
|
SMCJ13CA-QHJ.W. Miller / Bourns |
TVS DIODE 13V 21.5V SMC |