类型 | 描述 |
---|---|
系列: | BZW04 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 53V |
电压 - 击穿(分钟): | 58.9V |
电压 - 钳位(最大值)@ ipp: | 85V |
电流 - 峰值脉冲 (10/1000µs): | 4.7A |
功率-峰值脉冲: | 400W |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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TVS DIODE 11.1V 18.2V SMB |
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P6SMBJ75CWickmann / Littelfuse |
TVS DIODE 64.1V 108.15V DO214AA |
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BZW04-273B B0GTSC (Taiwan Semiconductor) |
TVS DIODE 273V 438V DO204AL |
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TVS DIODE 75V 121V DO214AC |
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SMCJ6053AE3/TR13Microsemi |
TVS DIODE 33V 53.9V DO214AB |
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SMA6J400ARectron USA |
TVS DIO 600W 400V 548V UNI SMA |
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SMAJ30-E3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 30V 53.5V DO214AC |
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TMPG06-13AHE3/53Vishay General Semiconductor – Diodes Division |
TVS DIODE 11.1V 18.2V MPG06 |
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MSMBJ2K3.3E3Microsemi |
TVS DIODE 3.3V 5.8V DO214AA |
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SMCJ18CAHE3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 18V 29.2V DO214AB |
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ICTE12CHE3/51Vishay General Semiconductor – Diodes Division |
TVS DIODE 12V 17.1V 1.5KE |
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SMCJ6067E3/TR13Microsemi |
TVS DIODE 121V 223V DO214AB |
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3KP8.0AWickmann / Littelfuse |
TVS DIODE 8V 13.6V P600 |