类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
类型: | - |
单向通道: | - |
双向通道: | - |
电压 - 反向间隔(典型值): | - |
电压 - 击穿(分钟): | - |
电压 - 钳位(最大值)@ ipp: | - |
电流 - 峰值脉冲 (10/1000µs): | - |
功率-峰值脉冲: | - |
电源线保护: | - |
应用: | - |
电容@频率: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TPSMB27AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 27V 5% SMB PAR |
|
MSMCJ58AE3/TRRoving Networks / Microchip Technology |
TVS |
|
MXPLAD30KP170ARoving Networks / Microchip Technology |
TVS DIODE 170V 275V PLAD |
|
MPLAD18KP45AE3Roving Networks / Microchip Technology |
TVS DIODE 45V 72.7V PLAD |
|
MXPLAD7.5KP22ARoving Networks / Microchip Technology |
TVS DIODE |
|
MXLSMCGLCE51ARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO215AB |
|
MAPLAD6.5KP14ARoving Networks / Microchip Technology |
TVS DIODE 14V 23.2V MINI-PLAD |
|
MXPLAD18KP24CARoving Networks / Microchip Technology |
TVS DIODE 24V 38.9V PLAD |
|
MSMCJ90CAE3/TRRoving Networks / Microchip Technology |
TVS |
|
30KPA240AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 240V 387V P600 |
|
SMCJ30AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
MPLAD36KP170CARoving Networks / Microchip Technology |
TVS DIODE 170V 275V PLAD |
|
MXPLAD36KP280AE3Roving Networks / Microchip Technology |
TVS DIODE 280V 451V PLAD |