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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SMCJ8.0CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
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AK3-058C-12Wickmann / Littelfuse |
TVS DIODE 58V 110V AXIAL |
|
|
SMCG130CA-HRWickmann / Littelfuse |
TVS 1.5KW 130V 5%BI DO-215AB TR1 |
|
|
MXLPLAD18KP10AE3Roving Networks / Microchip Technology |
TVS DIODE 10V 17V PLAD |
|
|
MAPLAD6.5KP13CAE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V MINI-PLAD |
|
|
MASMCGLCE30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V DO215AB |
|
|
JTXV1N6112AUSSemtech |
T MET BI 500W 18V |
|
|
MASMCGLCE150AE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V DO215AB |
|
|
EPS17Roving Networks / Microchip Technology |
TVS DIODE |
|
|
1N6159Semtech |
TVS DIODE 38.8V 73.5V AXIAL |
|
|
MASMLG28AE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.4V DO215AB |
|
|
SMA6L8.5AWickmann / Littelfuse |
TVS DIODE 8.5V 14.4V DO221AC |
|
|
MXLPLAD30KP64CARoving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
