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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 150V |
| 电压 - 击穿（分钟）: | 167V |
| 电压 - 钳位（最大值）@ ipp: | 243V |
| 电流 - 峰值脉冲 (10/1000µs): | 62A |
| 功率-峰值脉冲: | 15000W (15kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MAPLAD18KP170CAE3Roving Networks / Microchip Technology |
TVS DIODE 170V 275V PLAD |
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M1.5KE47ARoving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V CASE-1 |
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MXL1.5KE51ARoving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V CASE-1 |
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MXPLAD36KP16CAE3Roving Networks / Microchip Technology |
TVS DIODE 16V 27.2V PLAD |
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JTXV1N6106AUSSemtech |
T MET BI 500W 10V |
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30KPA42E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 42V P600 |
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SMCJ100AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MXLSMLG30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V DO215AB |
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MPLAD30KP75AE3/TRRoving Networks / Microchip Technology |
TVS |
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TLP28CAWickmann / Littelfuse |
HI-REL TVS AXL HP TLP28 BI |
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MPLAD18KP48CAE3Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V PLAD |
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MXLPLAD18KP64ARoving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
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MAPLAD18KP40AE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V PLAD |
