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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 22V |
| 电压 - 击穿（分钟）: | 24.4V |
| 电压 - 钳位（最大值）@ ipp: | 35.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 508A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MASMCG9.0CARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO215AB |
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SMCJ15A-HRAT7Wickmann / Littelfuse |
TVS DIODE 15V 24.4V DO214AB |
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SZ1SMB54AT3GWickmann / Littelfuse |
ZEN TVS 600W 54V UNI DO-214AA TR |
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SMCJ30AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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5KP6.0E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 6V 11.4V P600 |
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MXLSMCGLCE8.5AE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO215AB |
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MXP6KE180AE3Roving Networks / Microchip Technology |
TVS DIODE 154V 246V T-18 |
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1N5645Roving Networks / Microchip Technology |
TVS DIODE |
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30KPA144A-HRWickmann / Littelfuse |
TVS DIODE 144V 223.2V P600 |
|
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MAPLAD15KP85ARoving Networks / Microchip Technology |
TVS DIODE 85V 137V PLAD |
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SMCJ78AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MXLPLAD18KP70AE3Roving Networks / Microchip Technology |
TVS DIODE 70V 113V PLAD |
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1N8164Roving Networks / Microchip Technology |
TVS DIODE |
