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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 70.1V |
| 电压 - 击穿（分钟）: | 77.9V |
| 电压 - 钳位（最大值）@ ipp: | 113V |
| 电流 - 峰值脉冲 (10/1000µs): | 13.3A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-13 |
| 供应商设备包: | DO-13 (DO-202AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SMA6L20AWickmann / Littelfuse |
TVS DIODE 20V 32.4V DO221AC |
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MSMCJ75A/TRRoving Networks / Microchip Technology |
TVS |
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MAPLAD36KP58CARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |
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JTX1N6157Semtech |
T MET BI 1500W |
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MASMCJLCE6.5A/TRRoving Networks / Microchip Technology |
HI REL TVS |
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MAPLAD18KP51CARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
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M1.5KE24AE3Roving Networks / Microchip Technology |
TVS DIODE 20.5V 33.2V CASE-1 |
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SMCJ9.0AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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SMCJ36CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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SMAJ5.0CA-QJ.W. Miller / Bourns |
DIO TVS VWM 5V 400W BIDIR SMA AE |
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M1.5KE150AE3Roving Networks / Microchip Technology |
TVS DIODE 128V 207V CASE-1 |
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MXLP6KE12AE3Roving Networks / Microchip Technology |
TVS DIODE 10.2V 16.7V T-18 |
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MV1N8175USRoving Networks / Microchip Technology |
TVS DIODE |
