English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 18V |
| 电压 - 击穿（分钟）: | 21.2V |
| 电压 - 钳位（最大值）@ ipp: | 25.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 50A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-13 |
| 供应商设备包: | DO-13 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLPLAD18KP180CARoving Networks / Microchip Technology |
TVS DIODE 180V 291V PLAD |
|
|
MXPLAD15KP7.5CARoving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V PLAD |
|
|
M1.5KE75CARoving Networks / Microchip Technology |
TVS DIODE 64.1V 103V CASE-1 |
|
|
MXL1.5KE170CAE3Roving Networks / Microchip Technology |
TVS DIODE 145V 234V CASE-1 |
|
|
MXLSMBJ17AE3/TRRoving Networks / Microchip Technology |
TVS |
|
|
MAPLAD18KP28CAE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.5V PLAD |
|
|
MXLSMCGLCE18ARoving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
|
|
ESD2B5.0MUT3GRochester Electronics |
ESD PROTECTION DIODE |
|
|
15KPA75CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 75V P600 |
|
|
HSP031-1BM6STMicroelectronics |
1-LINE ESD PROTECTION FOR ETHERN |
|
|
ESDA20P50-1U1MSTMicroelectronics |
TVS DIODE 18V IPP |
|
|
TPSMB9.1AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 9.1V 5% SMB PAR |
|
|
MPLAD18KP150CARoving Networks / Microchip Technology |
TVS DIODE 150V 243V PLAD |
