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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 45V |
| 电压 - 击穿（分钟）: | 50V |
| 电压 - 钳位（最大值）@ ipp: | 72.7V |
| 电流 - 峰值脉冲 (10/1000µs): | 248A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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TVS DIODE 145V 234V CASE-1 |
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MXLPLAD15KP24CAE3Roving Networks / Microchip Technology |
TVS DIODE 24V 38.9V PLAD |
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MPLAD30KP54AE3/TRRoving Networks / Microchip Technology |
TVS |
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XBP4SMAJ024C-GTorex Semiconductor Ltd. |
TVS DIODE |
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TVS DIODE 28V 45.4V DO215AB |
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SMCG6056A/TR13Microsemi |
TVS DIODE 43V 70.1V DO215AB |
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MXSMLG30CAE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V DO215AB |
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SM5S14ATHE3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 14V 23.2V DO218AC |
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LDTS30ARoving Networks / Microchip Technology |
TVS DIODE 30V 48.5V TO3 |
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ESDM1121MX4T5GSanyo Semiconductor/ON Semiconductor |
ESD PROTECTION DIODES |
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SMAJ26CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO214AC |
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MX1.5KE39AE3Roving Networks / Microchip Technology |
TVS DIODE 33.3V 53.9V CASE-1 |
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MXLPLAD7.5KP18AE3Roving Networks / Microchip Technology |
TVS DIODE |
