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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 15V |
| 电压 - 击穿（分钟）: | 16.7V |
| 电压 - 钳位（最大值）@ ipp: | 24.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 123A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AB, SMC Gull Wing |
| 供应商设备包: | SMLG (DO-215AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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15KPA64CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 64V 104.2V P600 |
|
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1N6150ASemtech |
TVS DIODE 16.7V 30.5V AXIAL |
|
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MSMLJ120CA/TRRoving Networks / Microchip Technology |
TVS |
|
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SMC5K15A-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 15V 24.4V DO214AB |
|
|
JANTXV1N6129Roving Networks / Microchip Technology |
TVS DIODE 69.2V 131.36V AXIAL |
|
|
MXLPLAD30KP260AE3Roving Networks / Microchip Technology |
TVS DIODE 260V 419V PLAD |
|
|
JTXV1N6137AUSSemtech |
T MET BI 500W 200V |
|
|
TPSMB18AHM3_A/IVishay General Semiconductor – Diodes Division |
600W 18V 5% SMB PAR |
|
|
P4KE13CT/REIC Semiconductor, Inc. |
BI-DIRECTIONAL TVS 400W, CASE TY |
|
|
1N6072Roving Networks / Microchip Technology |
TVS DIODE 175V 344V DO13 |
|
|
1.5SMC36CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
|
SMAJ100CA-QJ.W. Miller / Bourns |
DIO TVS VWM 100V 400W BIDIR SMA |
|
|
MXSMLG90ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V DO215AB |
