类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
类型: | - |
单向通道: | - |
双向通道: | - |
电压 - 反向间隔(典型值): | - |
电压 - 击穿(分钟): | - |
电压 - 钳位(最大值)@ ipp: | - |
电流 - 峰值脉冲 (10/1000µs): | - |
功率-峰值脉冲: | - |
电源线保护: | - |
应用: | - |
电容@频率: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1.5SMC480AHM3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1.5KW 480V DO214AB |
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MSMCGLCE26AE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO215AB |
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MXLPLAD30KP16ARoving Networks / Microchip Technology |
TVS DIODE 16V 27.2V PLAD |
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MSMCJ54CA/TRRoving Networks / Microchip Technology |
TVS |
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1N6051Roving Networks / Microchip Technology |
TVS DIODE 26V 47.7V DO13 |
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MXLSMLG18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
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MXP6KE56CAE3Roving Networks / Microchip Technology |
TVS DIODE 47.8V 77V T-18 |
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5KP170CA-BWickmann / Littelfuse |
TVS DIODE 170V 275V P600 |
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MXSMCG58CAE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO215AB |
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MAPLAD36KP100CAE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V PLAD |
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M1.5KE350AE3Roving Networks / Microchip Technology |
TVS DIODE 300V 482V CASE-1 |
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SMBG110A-E3/52Vishay General Semiconductor – Diodes Division |
600W 110V 5% UNIDIR SMB TVS |
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MXSMCG16CAE3Roving Networks / Microchip Technology |
TVS DIODE 16V 26V DO215AB |