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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 53V |
| 电压 - 击穿（分钟）: | 58.9V |
| 电压 - 钳位（最大值）@ ipp: | 85V |
| 电流 - 峰值脉冲 (10/1000µs): | 17.7A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MAPLAD18KP24CARoving Networks / Microchip Technology |
TVS DIODE 24V 38.9V PLAD |
|
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SMB10J36A-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 36V 58.1V DO214AA |
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MXLSMCG17CAE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO215AB |
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MXPLAD15KP24AE3Roving Networks / Microchip Technology |
TVS DIODE 24V 38.9V PLAD |
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JAN1N6123Roving Networks / Microchip Technology |
TVS DIODE 38.8V 73.61V AXIAL |
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MXSMCGLCE43AE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
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MXLPLAD18KP200CARoving Networks / Microchip Technology |
TVS DIODE 200V 322V PLAD |
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MASMLG13ARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO215AB |
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MALCE40AE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V CASE-1 |
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MASMLG17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO215AB |
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MPLAD15KP85CAE3/TRRoving Networks / Microchip Technology |
TVS |
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M1.5KE200CAE3Roving Networks / Microchip Technology |
TVS DIODE 171V 274V CASE-1 |
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MXLP6KE200CAE3Roving Networks / Microchip Technology |
TVS DIODE 171V 274V T-18 |
