English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 22V |
| 电压 - 击穿（分钟）: | 24.4V |
| 电压 - 钳位（最大值）@ ipp: | 36.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 990A |
| 功率-峰值脉冲: | 36000W (36kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPSMB7.5AHM3_A/IVishay General Semiconductor – Diodes Division |
600W 7.5V 5% SMB PAR |
|
|
MXLSMLG64AE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AB |
|
|
SMCJ43CA-HFComchip Technology |
DIODE TVS 43V 1500W SMC BI-DIR |
|
|
MXUPT5Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MAPLAD15KP48CAE3Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V PLAD |
|
|
JAN1N6152USRoving Networks / Microchip Technology |
TVS DIODE 20.6V 39.27V C SQ-MELF |
|
|
MSMCJ100CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
JANTX1N6163Roving Networks / Microchip Technology |
TVS DIODE 56V 108.26V C AXIAL |
|
|
MXL1.5KE220ARoving Networks / Microchip Technology |
TVS DIODE 185V 328V CASE-1 |
|
|
MXL1.5KE170CARoving Networks / Microchip Technology |
TVS DIODE 145V 234V CASE-1 |
|
|
MPLAD15KP13A/TRRoving Networks / Microchip Technology |
TVS |
|
|
CPDQC12VA-HFComchip Technology |
ESD DIODE 12VWM 22VC BI-DIRECTIO |
|
|
MXPLAD7.5KP30AE3Roving Networks / Microchip Technology |
TVS DIODE |
