类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 48V |
电压 - 击穿(分钟): | 53.3V |
电压 - 钳位(最大值)@ ipp: | 77.4V |
电流 - 峰值脉冲 (10/1000µs): | 97A |
功率-峰值脉冲: | 7500W (7.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | Nonstandard SMD |
供应商设备包: | Mini-PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MAPLAD7.5KP10ARoving Networks / Microchip Technology |
TVS DIODE |
|
SMCJ1.5KE180A-TPMicro Commercial Components (MCC) |
TVS DIODE 154V 246V DO214AB |
|
MASMCG18ARoving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
|
MASMLG24CAE3Roving Networks / Microchip Technology |
TVS DIODE 24V 38.9V DO215AB |
|
JANTX1N6165Roving Networks / Microchip Technology |
TVS DIODE 69.2V 131.36V C AXIAL |
|
MXLPLAD15KP75ARoving Networks / Microchip Technology |
TVS DIODE 75V 121V PLAD |
|
1N5652Roving Networks / Microchip Technology |
TVS DIODE |
|
SMCJ58AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
P6KE20ABULKEIC Semiconductor, Inc. |
UNI-DIRECTIONAL TVS 600W, CASE T |
|
SMCJ15CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
MXLLCE12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V CASE-1 |
|
MXLUPT8E3Roving Networks / Microchip Technology |
TVS DIODE |
|
M1.5KE68AE3Roving Networks / Microchip Technology |
TVS DIODE 58.1V 92V CASE-1 |