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| 类型 | 描述 |
|---|---|
| 系列: | 30KPA-HR |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 96V |
| 电压 - 击穿（分钟）: | 107.2V |
| 电压 - 钳位（最大值）@ ipp: | 156V |
| 电流 - 峰值脉冲 (10/1000µs): | 194.2A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MAPLAD15KP11CARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V PLAD |
|
|
1.5SMC18CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
|
MXP6KE6.8ARoving Networks / Microchip Technology |
TVS DIODE 5.8V 10.5V T-18 |
|
|
MXPLAD30KP16ARoving Networks / Microchip Technology |
TVS DIODE 16V 27.2V PLAD |
|
|
MXLSMLG14CARoving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AB |
|
|
MSMBJ12A/TRRoving Networks / Microchip Technology |
TVS |
|
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TPSMC15AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 12.8V 21.2V DO214AB |
|
|
JTX1N6168AUSSemtech |
T MET BI 1500W SM |
|
|
1N8164USRoving Networks / Microchip Technology |
TVS DIODE |
|
|
MXLSMCGLCE58ARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO215AB |
|
|
MXLSMLG150ARoving Networks / Microchip Technology |
TVS DIODE 150V 243V DO215AB |
|
|
JTX1N6143Semtech |
T MET BI 1500W |
|
|
MASMCGLCE43ARoving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
