English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 85V |
| 电压 - 击穿（分钟）: | 94.4V |
| 电压 - 钳位（最大值）@ ipp: | 137V |
| 电流 - 峰值脉冲 (10/1000µs): | 132A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLSMBG7.5CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
MP6KE150ARoving Networks / Microchip Technology |
TVS DIODE 128V 207V T-18 |
|
|
MAPLAD18KP8.5AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V PLAD |
|
|
MSMCGLCE75ARoving Networks / Microchip Technology |
TVS DIODE 75V 121V DO215AB |
|
|
MAPLAD6.5KP36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V MINI-PLAD |
|
|
MXLPLAD36KP33AE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V PLAD |
|
|
1N5650ARoving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V DO13 |
|
|
JTX1N6155ASemtech |
T MET BI 1500W |
|
|
JAN1N6101Roving Networks / Microchip Technology |
TVS DIODE 16CDIP |
|
|
M1.5KE15AE3Roving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V CASE-1 |
|
|
SMCJ64CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MPLAD7.5KP14CARoving Networks / Microchip Technology |
TVS DIODE |
|
|
SMSZ1600-35T3DSGSanyo Semiconductor/ON Semiconductor |
TVS DIODE SOD123 |
