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| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, SMAJ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 200V |
| 电压 - 击穿（分钟）: | 224V |
| 电压 - 钳位（最大值）@ ipp: | 324V |
| 电流 - 峰值脉冲 (10/1000µs): | 1.2A |
| 功率-峰值脉冲: | 400W |
| 电源线保护: | No |
| 应用: | Automotive, Telecom |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AC, SMA |
| 供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MSMLG33CARoving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO215AB |
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MAPLAD36KP51CARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
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MV1N8151USRoving Networks / Microchip Technology |
TVS DIODE |
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MAPLAD30KP58ARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |
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MXPLAD18KP30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V PLAD |
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JTXV1N6104AUSSemtech |
T MET BI 500W 8V SM |
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MAP6KE36AE3Roving Networks / Microchip Technology |
TVS DIODE 30.8V 49.9V T-18 |
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JANTXV1N6469USRoving Networks / Microchip Technology |
TVS DIODE 5V 9V GMELF |
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MPLAD15KP10CA/TRRoving Networks / Microchip Technology |
TVS |
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1N6166Roving Networks / Microchip Technology |
TVS DIODE |
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30KPA198CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 198V 319.8V P600 |
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MXLP6KE150AE3Roving Networks / Microchip Technology |
TVS DIODE 128V 207V T-18 |
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MXSMCG12CARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO215AB |
