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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 11.1V |
| 电压 - 击穿（分钟）: | 12.4V |
| 电压 - 钳位（最大值）@ ipp: | 18.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 82A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MSMLG40CARoving Networks / Microchip Technology |
TVS DIODE 40V 64.5V DO215AB |
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DM8W13AQ-13Zetex Semiconductors (Diodes Inc.) |
TVS DO-218 |
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MXLPLAD36KP24AE3Roving Networks / Microchip Technology |
TVS DIODE 24V 39.8V PLAD |
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TVS DIODE 150V 243V PLAD |
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MXLPLAD6.5KP36AE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
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MXLPLAD6.5KP11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V PLAD |
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JANTX1N6475USRoving Networks / Microchip Technology |
TVS DIODE 40.3V 63.5V GMELF |
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MXLUPT33Roving Networks / Microchip Technology |
TVS DIODE |
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TVS DIODE 180V 291V PLAD |
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1N6161Roving Networks / Microchip Technology |
TVS DIODE |
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SMA6J6.0CA-QJ.W. Miller / Bourns |
TVS DIODE |
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MXP6KE120CARoving Networks / Microchip Technology |
TVS DIODE 102V 165V T-18 |
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MXLPLAD15KP40CAE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V PLAD |
