English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 43V |
| 电压 - 击穿（分钟）: | 47.8V |
| 电压 - 钳位（最大值）@ ipp: | 69.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 108A |
| 功率-峰值脉冲: | 7500W (7.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | Mini-PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MAPLAD7.5KP18ARoving Networks / Microchip Technology |
TVS DIODE |
|
|
15KPA26CA-HRAWickmann / Littelfuse |
TVS DIODE 26V 44V P600 |
|
|
MXLPLAD18KP7.5CAE3Roving Networks / Microchip Technology |
TVS DIODE 75V 121V PLAD |
|
|
SMCJ110A-QJ.W. Miller / Bourns |
DIO TVS VRWM 110V 1500W UNIDIR S |
|
|
1.5CE22A BK PBFREECentral Semiconductor |
TVS DIODE 18.8V 30.6V DO201 |
|
|
JTXV1N6106ASemtech |
T MET BI 500W 10V |
|
|
JAN1N6173USRoving Networks / Microchip Technology |
TVS DIODE 152V 286.65V C SQ-MELF |
|
|
SM6F12AYSTMicroelectronics |
DFD PROTECTION & FILTER |
|
|
JANTX1N5652ARoving Networks / Microchip Technology |
TVS DIODE 53V 85V DO13 |
|
|
JAN1N6167Roving Networks / Microchip Technology |
TVS DIODE 86.6V 158.87V C AXIAL |
|
|
MXSMLG130CAE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
|
|
MPLAD18KP20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V PLAD |
|
|
MSMBJ28AE3/TRRoving Networks / Microchip Technology |
TVS |
