类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 13.6V |
电压 - 击穿(分钟): | 15.2V |
电压 - 钳位(最大值)@ ipp: | 22.5V |
电流 - 峰值脉冲 (10/1000µs): | 67A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JTXV1N6113Semtech |
T MET BI 500W 20V |
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15KPA24A-HRAWickmann / Littelfuse |
TVS DIODE 24V 40.7V P600 |
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1.5SMC300AHM3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1.5KW 300V DO214AB |
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1.5SMC9.1A-QJ.W. Miller / Bourns |
DIO TVS VRWM 7.78V 1500W UNIDIR |
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MXLSMCG14CAE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AB |
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JANTX1N6123Roving Networks / Microchip Technology |
TVS DIODE 38.8V 73.61V AXIAL |
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JTXV1N6135ASemtech |
T MET BI 500W 160V |
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MXLPLAD6.5KP28CARoving Networks / Microchip Technology |
TVS DIODE 28V 45.5V PLAD |
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MXPLAD30KP43CAE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V PLAD |
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P4SMA24CA-E3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 20.5V 33.2V DO214AC |
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MXSMLG150CAE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V DO215AB |
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JAN1N6110USRoving Networks / Microchip Technology |
TVS DIODE 11.4V 22.05V B SQ-MELF |
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CD214C-T150ALFJ.W. Miller / Bourns |
TVS DIODE 150V 243V SMC |