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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/507 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 30V |
| 电压 - 击穿（分钟）: | 34.2V |
| 电压 - 钳位（最大值）@ ipp: | 49.9V |
| 电流 - 峰值脉冲 (10/1000µs): | 30A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-13 |
| 供应商设备包: | DO-13 (DO-202AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXLSMLG14AE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AB |
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MXLPLAD36KP30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.8V PLAD |
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MAPLAD15KP58CAE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |
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MAPLAD15KP40AE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V PLAD |
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MASMLG160CARoving Networks / Microchip Technology |
TVS DIODE 160V 259V DO215AB |
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JAN1N6163Roving Networks / Microchip Technology |
TVS DIODE 56V 108.26V C AXIAL |
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MXLSMCG45ARoving Networks / Microchip Technology |
TVS DIODE 45V 72.7V DO215AB |
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MPLAD15KP78AE3/TRRoving Networks / Microchip Technology |
TVS |
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MXLSMLG33CA/TRRoving Networks / Microchip Technology |
HI REL TVS |
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MXPLAD36KP30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.8V PLAD |
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MXLPLAD15KP9.0AE3Roving Networks / Microchip Technology |
TVS DIODE 9V 15.4V PLAD |
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SMCJ64AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MASMCGLCE15ARoving Networks / Microchip Technology |
TVS DIODE 15V 24.4V DO215AB |
