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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 51V |
| 电压 - 击穿（分钟）: | 56.7V |
| 电压 - 钳位（最大值）@ ipp: | 82.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 36.4A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | SMLJ (DO-214AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MAPLAD18KP120ARoving Networks / Microchip Technology |
TVS DIODE 120V 193V PLAD |
|
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MXLP6KE15ARoving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V T-18 |
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JANTXV1N6118ARoving Networks / Microchip Technology |
TVS DIODE 25.1V 45.7V AXIAL |
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MXLSMLG130ARoving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
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MXSMCG7.5AE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V DO215AB |
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MXPLAD18KP120ARoving Networks / Microchip Technology |
TVS DIODE 120V 193V PLAD |
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MPLAD36KP24AE3Roving Networks / Microchip Technology |
TVS DIODE 24V 39.8V PLAD |
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MAP6KE200ARoving Networks / Microchip Technology |
TVS DIODE 171V 274V T-18 |
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MX1.5KE12ARoving Networks / Microchip Technology |
TVS DIODE 10.22V 16.7V CASE-1 |
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MXLLCE15ARoving Networks / Microchip Technology |
TVS DIODE 15V 24.4V CASE-1 |
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MPLAD36KP180AE3Roving Networks / Microchip Technology |
TVS DIODE 180V 291V PLAD |
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JTX1N6137AUSSemtech |
T MET BI 500W 200V |
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JTXV1N6106Semtech |
T MET BI 500W 10V |
