类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 7.78V |
电压 - 击穿(分钟): | 8.65V |
电压 - 钳位(最大值)@ ipp: | 13.4V |
电流 - 峰值脉冲 (10/1000µs): | 112A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | DO-201 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SM8S26A-QJ.W. Miller / Bourns |
DIO TVS VWM 26V 6K6W UNIDIR SM8S |
|
MQ1N8155USRoving Networks / Microchip Technology |
TVS DIODE |
|
JAN1N6105Roving Networks / Microchip Technology |
TVS DIODE 6.9V 14.07V AXIAL |
|
MXLPLAD6.5KP10CAE3Roving Networks / Microchip Technology |
TVS DIODE 10V 17V PLAD |
|
JAN1N6103USRoving Networks / Microchip Technology |
TVS DIODE 5.7V 11.76V B SQ-MELF |
|
SMAJ40CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 40V 71.4V DO214AC |
|
MX1N8177USRoving Networks / Microchip Technology |
TVS DIODE |
|
MPLAD30KP100CA/TRRoving Networks / Microchip Technology |
TVS |
|
MXSMCG20AE3Roving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO215AB |
|
CD214L-T8.5CALFJ.W. Miller / Bourns |
TVS DIODE 8.5V 14.4V SMC |
|
30KPA96CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 96V 156V P600 |
|
MXP6KE27CARoving Networks / Microchip Technology |
TVS DIODE 23.1V 37.5V T-18 |
|
ESDM2032MX4T5GSanyo Semiconductor/ON Semiconductor |
DIODE BIDIR ESD X4DFN2 |