类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 48V |
电压 - 击穿(分钟): | 53.3V |
电压 - 钳位(最大值)@ ipp: | 77.4V |
电流 - 峰值脉冲 (10/1000µs): | 195A |
功率-峰值脉冲: | 15000W (15kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | Nonstandard SMD |
供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JTX1N6129AUSSemtech |
T MET BI 500W 91V SM |
|
MSMCGLCE43ARoving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
|
1.5CE180A BK PBFREECentral Semiconductor |
TVS DIODE 154V 246V DO201 |
|
MPLAD18KP43ARoving Networks / Microchip Technology |
TVS DIODE 43V 69.4V PLAD |
|
MXSMLG6.0ARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AB |
|
MXSMCG10A/TRRoving Networks / Microchip Technology |
HI REL TVS |
|
MASMLG6.5AE3Roving Networks / Microchip Technology |
TVS DIODE 6.5V 11.2V DO215AB |
|
MXL1.5KE100CARoving Networks / Microchip Technology |
TVS DIODE 85.5V 137V CASE-1 |
|
JANTXV1N6157Roving Networks / Microchip Technology |
TVS DIODE 32.7V 59.1V C AXIAL |
|
MXLPLAD18KP75CAE3Roving Networks / Microchip Technology |
TVS DIODE 75V 121V PLAD |
|
JTXV1N6134AUSSemtech |
T MET BI 500W 150V |
|
MXLSMCGLCE150AE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V DO215AB |
|
P6KE250A-01R0GTSC (Taiwan Semiconductor) |
TVS DIODE |