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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 26V |
| 电压 - 击穿（分钟）: | 28.9V |
| 电压 - 钳位（最大值）@ ipp: | 42.1V |
| 电流 - 峰值脉冲 (10/1000µs): | 154A |
| 功率-峰值脉冲: | 6500W (6.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MSMCJ36AE3/TRRoving Networks / Microchip Technology |
TVS |
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5.0SMLJ11A-TPMicro Commercial Components (MCC) |
TVS DIODE 11V 18.2V DO214AB |
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MAPLAD36KP280CARoving Networks / Microchip Technology |
TVS DIODE 280V 451V PLAD |
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MP6KE18CARoving Networks / Microchip Technology |
TVS DIODE 15.3V 25.2V T-18 |
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MLCE60AE3Roving Networks / Microchip Technology |
TVS DIODE 60V 96.8V CASE-1 |
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MXLSMCGLCE90ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V DO215AB |
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MXLPLAD30KP24AE3Roving Networks / Microchip Technology |
TVS DIODE 24V 39.8V PLAD |
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SMCJ45CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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ICT-45CRoving Networks / Microchip Technology |
TVS DIODE 45V 70V DO13 |
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JANTXV1N6124Roving Networks / Microchip Technology |
TVS DIODE 42.6V 80.85V AXIAL |
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SMCJ48A-HRAT7Wickmann / Littelfuse |
TVS DIODE 48V 77.4V DO214AB |
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JAN1N6117USRoving Networks / Microchip Technology |
TVS DIODE 22.8V 43.68V B SQ-MELF |
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NNCD6.8PL-T2-ARochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
