English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 145V |
| 电压 - 击穿（分钟）: | 162V |
| 电压 - 钳位（最大值）@ ipp: | 234V |
| 电流 - 峰值脉冲 (10/1000µs): | 6.4A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
5KP28CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 28V 50V P600 |
|
|
MPLAD130KP275CVE3Roving Networks / Microchip Technology |
TVS DIODE 275V 445V PLAD |
|
|
30KPA270AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 270V 436.2V P600 |
|
|
MPLAD18KP26CAE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V PLAD |
|
|
MXLPLAD30KP110ARoving Networks / Microchip Technology |
TVS DIODE 110V 177V PLAD |
|
|
MXPLAD30KP30ARoving Networks / Microchip Technology |
TVS DIODE 30V 48.8V PLAD |
|
|
MAPLAD18KP160ARoving Networks / Microchip Technology |
TVS DIODE 160V 259V PLAD |
|
|
MXLP6KE24ARoving Networks / Microchip Technology |
TVS DIODE 20.5V 33.2V T-18 |
|
|
MASMLG43AE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
|
|
1.5SMC22CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
|
CD214C-T9.0CALFJ.W. Miller / Bourns |
TVS DIODE 9V 15.4V SMC |
|
|
MSMCJLCE8.5A/TRRoving Networks / Microchip Technology |
TVS |
|
|
JTXV1N6112Semtech |
T MET BI 500W 18V |
