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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 16V |
| 电压 - 击穿（分钟）: | 17.8V |
| 电压 - 钳位（最大值）@ ipp: | 27.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 1324A (1.324kA) |
| 功率-峰值脉冲: | 36000W (36kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMCG6046A/TR13Microsemi |
TVS DIODE 17V 27.7V DO215AB |
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|
SMPC43ANHM3/HVishay General Semiconductor – Diodes Division |
1.5KW 43V 5% UNIDIR SMPC TVS |
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P4SMA180CA-QJ.W. Miller / Bourns |
DIO TVS VBR 180V 400W BIDIR SMA |
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MXPLAD15KP48CARoving Networks / Microchip Technology |
TVS DIODE 48V 77.4V PLAD |
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D7V9S1U2LP-7BZetex Semiconductors (Diodes Inc.) |
SURGE PROTECTION PP U-DFN1006-2 |
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SMCJ12AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MAPLAD6.5KP40CAE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V MINI-PLAD |
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|
MAPLAD6.5KP43AE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V MINI-PLAD |
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|
MXP6KE56CARoving Networks / Microchip Technology |
TVS DIODE 47.8V 77V T-18 |
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MXPLAD30KP51ARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
|
|
MXPLAD7.5KP10AE3Roving Networks / Microchip Technology |
TVS DIODE |
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|
MXSMLG22CARoving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO215AB |
|
|
1.5CE22CA BK PBFREECentral Semiconductor |
TVS DIODE 18.8V 30.6V DO201 |
