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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXSMLG14ARoving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AB |
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MPLAD18KP70CAE3Roving Networks / Microchip Technology |
TVS DIODE 70V 113V PLAD |
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SMCJ26CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MLCE54ARoving Networks / Microchip Technology |
TVS DIODE 54V 87.1V CASE-1 |
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MPLAD30KP40A/TRRoving Networks / Microchip Technology |
TVS |
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JTXV1N6117USSemtech |
T MET BI 500W 27V US |
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MXLSMCG33AE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO215AB |
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JAN1N6153AUSSemtech |
TVS BI 1500W 28.5V SM |
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1N6168Roving Networks / Microchip Technology |
TVS DIODE |
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TPSMC27AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 23.1V 37.5V DO214AB |
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1N6116ARoving Networks / Microchip Technology |
TVS DIODE 20.6V 37.4V AXIAL |
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MXL1.5KE47CARoving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V CASE-1 |
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MXSMCG12CAE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO215AB |
