类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 11.1V |
电压 - 击穿(分钟): | 12.4V |
电压 - 钳位(最大值)@ ipp: | 18.2V |
电流 - 峰值脉冲 (10/1000µs): | 82A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | DO-201 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MPLAD36KP64CAE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
![]() |
MAPLAD30KP16AE3Roving Networks / Microchip Technology |
TVS DIODE 16V 27.2V PLAD |
![]() |
ICT-12Roving Networks / Microchip Technology |
TVS DIODE 12V 16.5V DO13 |
![]() |
MXLSMCG90AE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V DO215AB |
![]() |
SMCJ8.0A-HFComchip Technology |
DIODE TVS 8V 1500W SMC UNI-DIR |
![]() |
MASMCG6.0AE3Roving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AB |
![]() |
5KP36E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 36V 64.3V P600 |
![]() |
ESDL4151MX4T5GSanyo Semiconductor/ON Semiconductor |
DIODE ESD PROTECTION X3DFN2 |
![]() |
MXLPLAD30KP22ARoving Networks / Microchip Technology |
TVS DIODE 22V 36.4V PLAD |
![]() |
SMCJ60CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
![]() |
MPLAD18KP64CAE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
![]() |
MXLSMCGLCE40AE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V DO215AB |
![]() |
SMCJ1.5KE540A-TPMicro Commercial Components (MCC) |
TVS DIODE 459V 740V DO214AB |