English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 18.8V |
| 电压 - 击穿（分钟）: | 20.9V |
| 电压 - 钳位（最大值）@ ipp: | 30.6V |
| 电流 - 峰值脉冲 (10/1000µs): | 49A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N6127USRoving Networks / Microchip Technology |
TVS DIODE |
|
|
1N8154Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MASMCGLCE45AE3Roving Networks / Microchip Technology |
TVS DIODE 45V 72.7V DO215AB |
|
|
MXPLAD30KP51CAE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
|
|
JANTX1N5654ARoving Networks / Microchip Technology |
TVS DIODE 64.1V 103V DO13 |
|
|
MXLUPT12E3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
15KPA70E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 70V P600 |
|
|
MXSMCGLCE48AE3Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO215AB |
|
|
MPLAD7.5KP15A/TRRoving Networks / Microchip Technology |
TVS |
|
|
TPSMB30AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 30V 5% SMB PAR |
|
|
MQ1N8156USRoving Networks / Microchip Technology |
TVS DIODE |
|
|
MAPLAD7.5KP36AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
VBUS05M2-HT1-G4-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 5.5V 18V LLP1006-3L |
