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| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TPSMB-VR |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 110V |
| 电压 - 击穿（分钟）: | 122V |
| 电压 - 钳位（最大值）@ ipp: | 177V |
| 电流 - 峰值脉冲 (10/1000µs): | 3.4A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | Automotive |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | DO-214AA (SMBJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMCG6042/TR13Microsemi |
TVS DIODE 10V 19V DO215AB |
|
|
JTXV1N6139Semtech |
T MET BI 1500W |
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MX1.5KE170AE3Roving Networks / Microchip Technology |
TVS DIODE 145V 234V CASE-1 |
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5KP8.5CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V P600 |
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1N6140AUSSemtech |
TVS DIODE 6.2V 12.1V |
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JTXV1N6123Semtech |
T MET BI 500W 51V |
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MXPLAD36KP100ARoving Networks / Microchip Technology |
TVS DIODE 100V 162V PLAD |
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SMCJ24CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MASMCGLCE60AE3Roving Networks / Microchip Technology |
TVS DIODE 60V 96.8V DO215AB |
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1.5CE39A BK PBFREECentral Semiconductor |
TVS DIODE 33.3V 53.9V DO201 |
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JANTX1N6072ARoving Networks / Microchip Technology |
TVS DIODE 185V 328V DO13 |
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MASMLG120AE3Roving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AB |
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MXLPLAD36KP90CAE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
