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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 51V |
| 电压 - 击穿（分钟）: | 56.7V |
| 电压 - 钳位（最大值）@ ipp: | 82.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 366A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MSMLJ100CAE3/TRRoving Networks / Microchip Technology |
TVS |
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MAPLAD18KP40CAE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V PLAD |
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MXLPLAD18KP10ARoving Networks / Microchip Technology |
TVS DIODE 10V 17V PLAD |
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MPLAD36KP18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 30.8V PLAD |
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MXLCE90ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V CASE-1 |
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M1.5KE30CAE3Roving Networks / Microchip Technology |
TVS DIODE 25.6V 41.4V CASE-1 |
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MASMLG100AE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V DO215AB |
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MXPLAD18KP7.0CARoving Networks / Microchip Technology |
TVS DIODE 7V 12V PLAD |
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MSMLG43AE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
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MAPLAD30KP16CARoving Networks / Microchip Technology |
TVS DIODE 16V 27.2V PLAD |
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MXLPLAD7.5KP10ARoving Networks / Microchip Technology |
TVS DIODE |
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JAN1N6122Roving Networks / Microchip Technology |
TVS DIODE 35.8V 67.83V AXIAL |
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MXSMCG24ARoving Networks / Microchip Technology |
TVS DIODE 24V 38.9V DO215AB |
