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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 24V |
| 电压 - 击穿（分钟）: | 26.7V |
| 电压 - 钳位（最大值）@ ipp: | 38.9V |
| 电流 - 峰值脉冲 (10/1000µs): | 77.2A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | SMLJ (DO-214AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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ESD DIODE 3.3VWM UNI-DIRECTIONAL |
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MQ1N8147Roving Networks / Microchip Technology |
TVS DIODE |
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JAN1N6111USRoving Networks / Microchip Technology |
TVS DIODE 12.2V 23.42V B SQ-MELF |
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MXLP6KE200CARoving Networks / Microchip Technology |
TVS DIODE 171V 274V T-18 |
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1N8171Roving Networks / Microchip Technology |
TVS DIODE |
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MASMCGLCE6.5ARoving Networks / Microchip Technology |
TVS DIODE 6.5V 11.2V DO215AB |
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MXLLCE9.0ARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V CASE-1 |
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EPS12SMRoving Networks / Microchip Technology |
TVS DIODE |
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JTXV1N6130Semtech |
T MET BI 500W 100V |
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MASMLG24ARoving Networks / Microchip Technology |
TVS DIODE 24V 38.9V DO215AB |
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CD214C-T64ALFJ.W. Miller / Bourns |
TVS DIODE 64V 103V SMC |
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MAPLAD15KP17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V PLAD |
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SMCJ1.5KE160CA-TPMicro Commercial Components (MCC) |
TVS DIODE 136V 219V DO214AB |
