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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 300V |
| 电压 - 击穿（分钟）: | 332V |
| 电压 - 钳位（最大值）@ ipp: | 482V |
| 电流 - 峰值脉冲 (10/1000µs): | 4A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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M1.5KE100CAE3Roving Networks / Microchip Technology |
TVS DIODE 85.5V 137V CASE-1 |
|
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M1.5KE170AE3Roving Networks / Microchip Technology |
TVS DIODE 145V 234V CASE-1 |
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MSMLG64CAE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AB |
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JANTX1N6041ARoving Networks / Microchip Technology |
TVS DIODE 10V 16.7V DO13 |
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CD214L-T54CALFJ.W. Miller / Bourns |
TVS DIODE 54V 87.1V SMC |
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JAN1N6122USRoving Networks / Microchip Technology |
TVS DIODE 35.8V 67.83V B SQ-MELF |
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MXLCE16AE3Roving Networks / Microchip Technology |
TVS DIODE 16V 26V CASE-1 |
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MX1N8156USRoving Networks / Microchip Technology |
TVS DIODE |
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30KPA51CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 51V 86.4V P600 |
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SZESD7551MXWT5GSanyo Semiconductor/ON Semiconductor |
TVS DIODE BIDIR 5V X2DFN2 |
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MAPLAD36KP16CARoving Networks / Microchip Technology |
TVS DIODE 16V 27.2V PLAD |
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MASMLG85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
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MSMLG6.5AE3Roving Networks / Microchip Technology |
TVS DIODE 6.5V 11.2V DO215AB |
