English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 64.1V |
| 电压 - 击穿（分钟）: | 71.3V |
| 电压 - 钳位（最大值）@ ipp: | 103V |
| 电流 - 峰值脉冲 (10/1000µs): | 5.8A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | T-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLP6KE130CARoving Networks / Microchip Technology |
TVS DIODE 111V 179V T-18 |
|
|
15KPA18CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 18V 30.9V P600 |
|
|
15KPA160CA-HRAWickmann / Littelfuse |
TVS DIODE 160V 258.6V P600 |
|
|
MSMBJ30AE3/TRRoving Networks / Microchip Technology |
TVS |
|
|
MPLAD36KP60CARoving Networks / Microchip Technology |
TVS DIODE 60V 96.8V PLAD |
|
|
JTX1N6103AUSSemtech |
T MET BI 500W 7.5V SM |
|
|
MAPLAD15KP58ARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |
|
|
MASMCG17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO215AB |
|
|
MAPLAD6.5KP30CARoving Networks / Microchip Technology |
TVS DIODE 30V 48.4V MINI-PLAD |
|
|
1N6295AHE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 85.5V 137V 1.5KE |
|
|
MXPLAD7.5KP15ARoving Networks / Microchip Technology |
TVS DIODE |
|
|
MXL1.5KE220CARoving Networks / Microchip Technology |
TVS DIODE 185V 328V CASE-1 |
|
|
JANTX1N6105Roving Networks / Microchip Technology |
TVS DIODE 6.9V 14.07V AXIAL |
