类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 136V |
电压 - 击穿(分钟): | 152V |
电压 - 钳位(最大值)@ ipp: | 219V |
电流 - 峰值脉冲 (10/1000µs): | 6.8A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | DO-201 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JTXV1N6144ASemtech |
T MET BI 1500W |
|
SMAJ90CA-QJ.W. Miller / Bourns |
DIO TVS VWM 90V 400W BIDIR SMA A |
|
MX1.5KE350CAE3Roving Networks / Microchip Technology |
TVS DIODE 300V 482V CASE-1 |
|
MAPLAD36KP60CARoving Networks / Microchip Technology |
TVS DIODE 60V 96.8V PLAD |
|
MASMLG33CAE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO215AB |
|
JANTX1N6129Roving Networks / Microchip Technology |
TVS DIODE 69.2V 131.36V AXIAL |
|
MXLP6KE20CARoving Networks / Microchip Technology |
TVS DIODE 17.1V 27.7V T-18 |
|
MXLPLAD36KP120CARoving Networks / Microchip Technology |
TVS DIODE 120V 193V PLAD |
|
MASMCGLCE58AE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO215AB |
|
JTXV1N6127AUSTRSemtech |
T MET BI 500W 75V |
|
MXLP6KE8.2ARoving Networks / Microchip Technology |
TVS DIODE 7.02V 12.1V T-18 |
|
MPLAD18KP8.5CAE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V PLAD |
|
SMCJ60CA-HFComchip Technology |
DIODE TVS 60V 1500W SMC BI-DIR |