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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 8.55V |
| 电压 - 击穿（分钟）: | 9.5V |
| 电压 - 钳位（最大值）@ ipp: | 14.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 103A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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TPSMB7.5AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 7.5V 5% SMB PAR |
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MXP6KE150ARoving Networks / Microchip Technology |
TVS DIODE 128V 207V T-18 |
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MASMLG7.0ARoving Networks / Microchip Technology |
TVS DIODE 7V 12V DO215AB |
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MXSMCGLCE12ARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO215AB |
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MX1.5KE47AE3Roving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V CASE-1 |
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30KPA58CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 58V P600 |
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TVS524Roving Networks / Microchip Technology |
TVS DIODE 24V 42V AXIAL |
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T MET BI 1500W 39V SM |
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ESD8106MUTAGRochester Electronics |
LOW CAPACITANCE ESD PROTECTION F |
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TVS DIODE 120V 193V CASE-1 |
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TVS DIODE 28.2V 45.7V DO13 |
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15KPA40E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 40V P600 |
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MASMCG160AE3Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO215AB |
