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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/516 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 22.8V |
| 电压 - 击穿（分钟）: | 27.08V |
| 电压 - 钳位（最大值）@ ipp: | 43.68V |
| 电流 - 峰值脉冲 (10/1000µs): | 34.2A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | Axial |
| 供应商设备包: | C, Axial |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXLPLAD30KP15CARoving Networks / Microchip Technology |
TVS DIODE 15V 25.8V PLAD |
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JANTXV1N6053ARoving Networks / Microchip Technology |
TVS DIODE 33V 53.9V DO13 |
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M1.5KE51CAE3Roving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V CASE-1 |
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ICT-22Roving Networks / Microchip Technology |
TVS DIODE 22V 32V DO13 |
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JAN1N6155AUSSemtech |
TVS BI 1500W 34.2V SM |
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MXLSMCG28ARoving Networks / Microchip Technology |
TVS DIODE 28V 45.4V DO215AB |
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MXLPLAD30KP51ARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
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MSMLJ85AE3/TRRoving Networks / Microchip Technology |
TVS |
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MPLAD36KP130CARoving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
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DLTS13CAMicrosemi |
TVS DIODE 13V 20.6V 16DIP |
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MSMLG85AE3/TRRoving Networks / Microchip Technology |
TVS |
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JTXV1N6161Semtech |
T MET BI 1500W |
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MAPLAD36KP85ARoving Networks / Microchip Technology |
TVS DIODE 85V 137V PLAD |
