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| 类型 | 描述 |
|---|---|
| 系列: | SDxxLC |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 15V (Max) |
| 电压 - 击穿（分钟）: | 16.7V |
| 电压 - 钳位（最大值）@ ipp: | 31.8V |
| 电流 - 峰值脉冲 (10/1000µs): | 10A (8/20µs) |
| 功率-峰值脉冲: | 350W |
| 电源线保护: | No |
| 应用: | USB |
| 电容@频率: | 5pF @ 1MHz (Max) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SC-76, SOD-323 |
| 供应商设备包: | SOD-323 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXLLCE17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V CASE-1 |
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SMCJ10CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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1N6141USSemtech |
TVS DIODE 6.9V 14V |
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CD214C-T51CALFJ.W. Miller / Bourns |
TVS DIODE 51V 82.4V SMC |
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MXLUPTB5Roving Networks / Microchip Technology |
TVS DIODE |
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JAN1N6137USRoving Networks / Microchip Technology |
TVS DIODE 152V 286.65V B SQ-MELF |
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MXLPLAD30KP180CARoving Networks / Microchip Technology |
TVS DIODE 180V 291V PLAD |
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MXSMCGLCE8.0AE3Roving Networks / Microchip Technology |
TVS DIODE 8V 13.6V DO215AB |
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MXLUPT24E3Roving Networks / Microchip Technology |
TVS DIODE |
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MXSMCGLCE17ARoving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO215AB |
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DF5G6M4N,LFToshiba Electronic Devices and Storage Corporation |
BIDIRECTIONAL ESD DIODE 4 LINES, |
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MSMLG7.5AE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V DO215AB |
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MQ1N8182USRoving Networks / Microchip Technology |
TVS DIODE |
