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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 94V |
| 电压 - 击穿（分钟）: | 105V |
| 电压 - 钳位（最大值）@ ipp: | 152V |
| 电流 - 峰值脉冲 (10/1000µs): | 9.9A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SMA6J11A-QJ.W. Miller / Bourns |
TVS DIODE |
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5KP11CA-HRWickmann / Littelfuse |
TVS DIODE 11V 18.2V P600 |
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15KPA58AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 58V 93.8V P600 |
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MXLPLAD6.5KP33AE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V PLAD |
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MXSMCGLCE48ARoving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO215AB |
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MAPLAD18KP85CAE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V PLAD |
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1N8163USRoving Networks / Microchip Technology |
TVS DIODE |
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MXPLAD36KP100CARoving Networks / Microchip Technology |
TVS DIODE 100V 162V PLAD |
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MXLPLAD36KP90ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
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SMAJ150AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 150V 243V DO214AC |
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MXLPLAD15KP170CAE3Roving Networks / Microchip Technology |
TVS DIODE 170V 275V PLAD |
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MXSMCG18CARoving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
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MX1N8147USRoving Networks / Microchip Technology |
TVS DIODE |
