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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 54V |
| 电压 - 击穿（分钟）: | 60V |
| 电压 - 钳位（最大值）@ ipp: | 87.1V |
| 电流 - 峰值脉冲 (10/1000µs): | 207A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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30KPA54CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 54V P600 |
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MXPLAD15KP17CARoving Networks / Microchip Technology |
TVS DIODE 17V 27.6V PLAD |
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MXPLAD15KP14CAE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V PLAD |
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MASMCGLCE18ARoving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
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MASMCGLCE16ARoving Networks / Microchip Technology |
TVS DIODE 16V 26V DO215AB |
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MXPLAD30KP260AE3Microsemi |
TVS DIODE 260V 419V PLAD |
|
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MASMCG6.0ARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AB |
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MXLPLAD30KP400AE3Roving Networks / Microchip Technology |
TVS DIODE 400V 644V PLAD |
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JANTXV1N6164AUSRoving Networks / Microchip Technology |
TVS DIODE 62.2V 112.8V C SQ-MELF |
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30KPA70A-HRWickmann / Littelfuse |
TVS DIODE 70V 109V P600 |
|
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MXP6KE47CARoving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V T-18 |
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MSMCGLCE6.5ARoving Networks / Microchip Technology |
TVS DIODE 6.5V 11.2V DO215AB |
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MAPLAD7.5KP12AE3Roving Networks / Microchip Technology |
TVS DIODE |
