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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SMCJ188CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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SMCJ7.0CA-HFComchip Technology |
DIODE TVS 7V 1500W SMC BI-DIR |
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JANTXV1N6141Roving Networks / Microchip Technology |
TVS DIODE 6.9V 14.07V C AXIAL |
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MLCE160AE3Roving Networks / Microchip Technology |
TVS DIODE 160V 259V CASE-1 |
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MASMBG18CA/TRRoving Networks / Microchip Technology |
HI REL TVS |
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1.5CE160A TR PBFREECentral Semiconductor |
TVS DIODE 136V 219V DO201 |
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MASMCG48AE3Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO215AB |
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JAN1N6137Roving Networks / Microchip Technology |
TVS DIODE 152V 286.65V AXIAL |
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MXSMLG11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AB |
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SMPC58ANHM3/IVishay General Semiconductor – Diodes Division |
1.5KW 58V 5% UNIDIR SMPC TVS |
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MXSMLG170AE3Roving Networks / Microchip Technology |
TVS DIODE 170V 275V DO215AB |
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1N6139USSemtech |
TVS DIODE 5.7V 11.8V |
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MAPLAD15KP30ARoving Networks / Microchip Technology |
TVS DIODE 30V 48.4V PLAD |
