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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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5KP85CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 85V 137V P600 |
|
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30KPA240CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 240V 387V P600 |
|
|
MXLSMCG6.0CARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AB |
|
|
MXLSMCGLCE130ARoving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
|
|
MXLPLAD36KP75AE3Roving Networks / Microchip Technology |
TVS DIODE 75V 121V PLAD |
|
|
VCAN16A2-03SHE3-18Vishay General Semiconductor – Diodes Division |
ESD PROTECTION DIODE SOT23-HE3 |
|
|
MXPLAD36KP17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 28.8V PLAD |
|
|
TPSMB9.1AHM3_A/IVishay General Semiconductor – Diodes Division |
600W 9.1V 5% SMB PAR |
|
|
30KPA240A-HRWickmann / Littelfuse |
TVS DIODE 240V 387V P600 |
|
|
SMCJ8.5CA-QHJ.W. Miller / Bourns |
DIO TVS VRWM 8.5V 1500W BIDIR SM |
|
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MASMCG48ARoving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO215AB |
|
|
MX1.5KE30AE3Roving Networks / Microchip Technology |
TVS DIODE 25.6V 41.4V CASE-1 |
|
|
15KPA110CA-HRAWickmann / Littelfuse |
TVS DIODE 110V 178.6V P600 |
