TVS
MODULE DDR3 SDRAM 4GB 1066MT/S
类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 7V |
电压 - 击穿(分钟): | 7.78V |
电压 - 钳位(最大值)@ ipp: | 12V |
电流 - 峰值脉冲 (10/1000µs): | 50A |
功率-峰值脉冲: | 600W |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MXLPLAD30KP18ARoving Networks / Microchip Technology |
TVS DIODE 18V 30.8V PLAD |
|
SMCJ90A-QJ.W. Miller / Bourns |
DIO TVS VRWM 90V 1500W UNIDIR SM |
|
MXLPLAD36KP15CARoving Networks / Microchip Technology |
TVS DIODE 15V 25.8V PLAD |
|
MPLAD36KP51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
|
MXPLAD7.5KP36ARoving Networks / Microchip Technology |
TVS DIODE |
|
MASMLG30ARoving Networks / Microchip Technology |
TVS DIODE 30V 48.4V DO215AB |
|
1N6363Roving Networks / Microchip Technology |
TVS DIODE 36V 54.3V DO13 |
|
MSMCGLCE9.0AE3Roving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO215AB |
|
MXLPLAD15KP58ARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |
|
MXPLAD18KP160AE3Roving Networks / Microchip Technology |
TVS DIODE 160V 259V PLAD |
|
MXPLAD18KP7.5AE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V PLAD |
|
5.0SMLJ13A-TPMicro Commercial Components (MCC) |
TVS DIODE 13V 21.5V DO214AB |
|
SM8S26CA-QJ.W. Miller / Bourns |
DIO TVS VWM 26V 6K6W BIDIR SM8S |