English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 60V |
| 电压 - 击穿（分钟）: | 66.7V |
| 电压 - 钳位（最大值）@ ipp: | 96.8V |
| 电流 - 峰值脉冲 (10/1000µs): | 186A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTXV1N6111ARoving Networks / Microchip Technology |
TVS DIODE 12.2V 22.3V AXIAL |
|
|
MASMLG40CAE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V DO215AB |
|
|
5KP51CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 51V 91.1V P600 |
|
|
30KPA280CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 280V P600 |
|
|
MXLSMCG130CAE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
|
|
MLCE12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V CASE-1 |
|
|
MXLPLAD6.5KP45ARoving Networks / Microchip Technology |
TVS DIODE 45V 72.7V PLAD |
|
|
SMTJ76CATPowerStor (Eaton) |
TVS DIODE 76V 150VC SMT-4 |
|
|
5.0SMLJ110A-TPMicro Commercial Components (MCC) |
TVS DIODE 110V 177V DO214AB |
|
|
MAPLAD15KP110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V PLAD |
|
|
JTXV1N6117Semtech |
T MET BI 500W 30V |
|
|
MXLSMLG100CAE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V DO215AB |
|
|
1.5SMC39CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
