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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXLSMCGLCE7.0AE3Roving Networks / Microchip Technology |
TVS DIODE 7V 12V DO215AB |
|
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5KP36AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V P600 |
|
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MASMCGLCE26AE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO215AB |
|
|
1N8176Roving Networks / Microchip Technology |
TVS DIODE |
|
|
JTXV1N6119Semtech |
T MET BI 500W 36V |
|
|
LTKAK3-066CWickmann / Littelfuse |
TVS DIODE 66V 120VC SMTO218 |
|
|
MSMCGLCE8.0AE3Roving Networks / Microchip Technology |
TVS DIODE 8V 13.6V DO215AB |
|
|
MXPLAD18KP11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V PLAD |
|
|
MPLAD18KP78CAE3Roving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
|
1N6070Roving Networks / Microchip Technology |
TVS DIODE 155V 292V DO13 |
|
|
TPSMB8.2AHM3_A/IVishay General Semiconductor – Diodes Division |
600W 8.2V 5% SMB PAR |
|
|
1N6171USSemtech |
TVS DIODE 121.6V 228.8V |
|
|
MX1.5KE15CARoving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V CASE-1 |
