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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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JANTXV1N6130Roving Networks / Microchip Technology |
TVS DIODE 76V 144.48V AXIAL |
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SMA6J9.0A-QJ.W. Miller / Bourns |
TVS DIODE |
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SMCJ16AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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JTXV1N6125AUSSemtech |
T MET BI 500W 62V SM |
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30KPA170A-HRWickmann / Littelfuse |
TVS DIODE 170V 275V P600 |
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MSMCGLCE15ARoving Networks / Microchip Technology |
TVS DIODE 15V 24.4V DO215AB |
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SM15T10AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MQ1N8169USRoving Networks / Microchip Technology |
TVS DIODE |
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MXPLAD18KP43AE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V PLAD |
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MXPLAD7.5KP22CARoving Networks / Microchip Technology |
TVS DIODE |
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MXLPLAD18KP58CAE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |
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MPLAD18KP64AE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
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MLCE36ARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V CASE-1 |
