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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 58V |
| 电压 - 击穿（分钟）: | 64.4V |
| 电压 - 钳位（最大值）@ ipp: | 94V |
| 电流 - 峰值脉冲 (10/1000µs): | 53.4A |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTX1N6140Roving Networks / Microchip Technology |
TVS DIODE 6.2V 12.71V C AXIAL |
|
|
MSMCJ110CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
MSMCJ45CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
MXSMCG15CAE3Roving Networks / Microchip Technology |
TVS DIODE 15V 24.4V DO215AB |
|
|
1.5SMC43AHM3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
|
MSMLG8.5CAE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO215AB |
|
|
MXLPLAD36KP200CAE3Roving Networks / Microchip Technology |
TVS DIODE 200V 322V PLAD |
|
|
MXPLAD36KP30CAE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.8V PLAD |
|
|
JTXV1N6159ASemtech |
T MET BI 1500W |
|
|
MXLCE54AE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V CASE-1 |
|
|
MXLUPT5E3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
SMCJ15AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
SMCJ7.5CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
